A capacitive probe with shaped probe bias for ion flux measurements in depositing plasmas.
نویسندگان
چکیده
The application of a pulse shaped biasing method implemented to a capacitive probe is described. This approach delivers an accurate and simple way to determine ion fluxes in diverse plasma mixtures. To prove the reliability of the method, the ion probe was used in a different configuration, namely, a planar Langmuir probe. In this configuration, the ion current was directly determined from the I-V characteristic and compared with the ion current measured with the pulse shaped ion probe. The results from both measurements are in excellent agreement. It is demonstrated that the capacitive probe is able to perform spatially resolved ion flux measurements under high deposition rate conditions (2-20 nm/s) in a remote expanding thermal plasma in Ar/NH(3)/SiH(4) mixture.
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ورودعنوان ژورنال:
- The Review of scientific instruments
دوره 79 11 شماره
صفحات -
تاریخ انتشار 2008